Last Updated: Dec. 2004SDRAM PART NUMBERINGHY XX X XX XX X X XX X X X - XX XHYNIX MEMORYPRODUCT FAMILYPROCESS & POWER SUPPLYDENSITYORGANIZATION# of BANKINTERFACETEMPERATURESPEEDPACKAGE MATERIALPACKAGE TYPEPOWER CONSUMPTIONDIE GENERATION: VDD=3.3V & VDDQ=3.3V: VDD=3.0V & VDDQ=3.0V: VDD=2.5V & VDDQ=2.5V: VDD=2.5V & VDDQ=1.8V: VDD=1.8V & VDDQ=1.8V57: SDRAMVYUWS: 16M: 32M: 64M: 128M: 128M with TCSR: 256M: 256M with TCSR: 512M163264282A565A12481632: x4: x8: x16: x32: 2Banks: 4Banks1201: LVTTL: SSTL_3BlankEI: Commercial(0℃ ~70℃ ): Extended (-25℃ ~85℃ ): Industrial (-40℃ ~85℃ )55567KH8PS10: 200MHz: 183MHz: 166MHz: 143MHz: PC133, CL2: PC133, CL3: 125MHz: PC100, CL2: PC100, CL3: 100MHz: Normal: Lead free: Halogen free: Lead & Halogen freeBLANKPHRTSKJW: TSOP: Stack Package (Hynix): Stack Package (M & T): Stack Package (Others): KGD: Normal Power: Low Power: Super Low PowerBLANKLS: 1st Gen.: 2nd Gen.: 3rd Gen.: 4th Gen.: 5th Gen.: 6th Gen.BlankABCDE: 1st Gen.: 2nd Gen.: 3rd Gen.: 4th Gen.: 5th Gen.HHAHBHCHGIchonCheong-juLast Updated: Ju n. 2004HY X X X X X X XX X - XX XHYNIX MEMORYPRODUCT FAMILYPOWER SUPPLYDENSITYSPEEDPACKAGE TYPEPACKAGE MATERIALPOWER: VDD=3.3V & VDDQ=3.3V: VDD=3.0V/3.3V & VDDQ=3.0V/3.3V: VDD=2.5V & VDDQ=1.8V/2.5V: VDD=1.8V & VDDQ=1.8V5: SDRAMVYWS: 16M: 32M: 64M: 128M: 256M: 512M13625755567KHJ8PSB: 200MHz, CL3: 183MHz, CL3: 166MHz, CL3: 143MHz, CL3: 133MHz, CL2 2-2-2: 133MHz, CL3 3-3-3: 133MHz, CL3 3-2-2: 125MHz, CL3: 100MHz, CL2: 100MHz, CL3: 66MHz, CL2: FBGA: 60Ball FBGA: DDP: KGDFF6MWBlankPHR: Normal: Lead free: Halogen free: Lead & Halogen free: Normal: Low Power: Super Low PowerBlankLS♣ All SDRAM FBGA follow above Part Numbering SystemORGANIZATION: x4: x8: x16: x324862DIE GENERATION: 1st Gen.: 2nd Gen.: 3rd...
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