0.13um-shrink工艺的嵌入式闪存的耐久性特性研究

摘要0.13um-shrink工艺的嵌入式闪存的耐久性特性研究摘 要 耐久性特性是存储类芯片最为重要的可靠性课题之一。0.13um-shrink闪存器件因为其特殊的结构和工作模式，导致了特有的器件特性，同时还引入了其他的可靠性问题。 本文综合了直流电压应力和 UV 方式，研究了三栅分栅闪存器件耐久性退化机理，实验验证了多晶到多晶的 F-N电子隧穿擦除操作引起的隧穿氧化物束缚电子是导致三栅分栅闪存器件退化的重要原因。基于器件耐久性退化机理，讲述了三栅分栅 闪存特殊的结构和操作方式。 在耐久性优化方面，本论文重点从器件操作条件对三栅分栅闪存器件的耐久性进行了研究。在优化器件操作条件方面，提出了过擦除方法和动态调节擦除电压的方法，应用于单个存储单元的测试中，相较于原始的擦除操作条件，能够很好的改善器件的耐久特性。关键词：闪存，耐久性，陷阱束缚电荷，耐久性优化,尺寸缩小AbstractInvestigation of 0.13um-shrink Flash Characteristics and Endurance ReliabilityAbstractEndurance is one of the most important reliability topics in flash memory. Due to the special physical structure and operation method in 0.13um-shrink flash memory, it has a unique device characteristic and a new reliability problem.In this thesis, by using of DC (Direct Current) stress and UV (ultraviolet), the mechanism of endurance degradation in triple split-gate flash memory is investigated. Poly-to-poly F-N (Fowler-Nordheim) erase tunneling induced electron trapping is confirmed to dominate the degradation of triple split-gate flash device during cycling. As for endurance optimization, the studies are carried out on the operation conditions. Two methods—Over-erase and Dynamic Adjusting Erase Voltage—are put forward and proved effectively for the enhancement of endurance characteristics in single-cell samples.Keywords: Flash, Endurance, Electron Trapping, shrink目录2.3 本章小结 ......................................................第三章 0.13um-shrink 闪存器件耐久特性和工作条件的关系研究3.1 器件耐久特性和工作...